advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 600v fast switching r ds(on) 3.6 simple drive requirement i d 3.3a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 4.3 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice parameter 3 parameter -55 to 150 67 1 + 30 storage temperature range -55 to 150 10 29 AP03N70I 3.3 2.1 rohs-compliant product 201203131 rating 600 g d s g d s to-220cfm(i) a p03n70 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. it provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching design and cost- effectiveness. the to-220cfm package is widely preferred for all commercial-industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =1.6a - - 3.6 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =1.6a - 2 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =480v , v gs =0v - - 500 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =3a - 12 20 nc q gs gate-source charge v ds =480v - 3 - nc q gd gate-drain ("miller") charge v gs =10v - 5 - nc t d(on) turn-on delay time 3 v dd =300v - 9 - ns t r rise time i d =3a - 5 - ns t d(off) turn-off delay time r g =10 -18- ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 600 960 pf c oss output capacitance v ds =25v - 45 - pf c rss reverse transfer capacitance f=1.0mhz - 4 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =3a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =3a, v gs =0v, - 422 - ns q rr reverse recovery charge di/dt=100a/s - 2580 - nc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=15mh , r g =25 , i as =3a. 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP03N70I
AP03N70I fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 1 2 3 4 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v 4.5v v g =4.0v 10v 6.0v 0 1 1 2 2 3 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.5v 4.5v 4.0v 10v 5.0v 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =1.6a v g =10v 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
AP03N70I fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 0 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) pdm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 4 8 12 16 0481216 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =480v 1 100 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on)
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